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China begins construction of $24 billion 3D NAND plant | DigiTimes

Discussion in 'China & Asia Pacific' started by Martian, Jan 18, 2017.

  1. Martian

    Martian Captain SENIOR MEMBER

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    Yangtze River Storage breaks ground for memory plant | DigiTimes

    "Yangtze River Storage Technology recently broke ground on a new memory semiconductor fabrication plant located in the Donghu New Technology Development Zone, Wuhan (Hebei province, China)....

    Total investment in the plant is estimated at US$24 billion, said Tsinghua Unigroup....

    Sun Wei from China's National Development and Reform Commission (NDRC) indicated three 3D NAND flash production lines will be equipped at the plant with volume production slated to kick off in 2018. The plant is looking to produce 300,000 12-inch wafers monthly by 2020, according to Sun."


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