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IISc to get Rs 3,000-crore foundry to produce ‘wonder’ nano material - GaN

Discussion in 'Indian Defence Industry' started by randomradio, Jul 8, 2017.

  1. randomradio

    randomradio Mod Staff Member MODERATOR

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    http://indianexpress.com/article/ed...ndry-to-produce-wonder-nano-material-4741048/

    IISc to get Rs 3,000-crore foundry to produce ‘wonder’ nano material
    The foundry is proposed to be developed around an existing facility for producing gallium nitride transistors on silicon wafers, at the IISc’s Centre for Nano Science and Engineering (CeNSE), under the leadership of associate professor Srinivasan Raghavan.

    The Indian Institute of Science (IISc) has received initial approvals from the government to set up a Rs 3,000-crore foundry to produce a “wonder” nano material, gallium nitride, that is emerging as one of the most efficient semiconductors for next-generation strategic technologies, including radars and communication systems.

    The foundry is proposed to be developed around an existing facility for producing gallium nitride transistors on silicon wafers, at the IISc’s Centre for Nano Science and Engineering (CeNSE), under the leadership of associate professor Srinivasan Raghavan.

    “The proposal is currently at the highest level of the government. It needs about Rs 3,000 crore and is seen as a strategic-sector investment,” Prof S A Shivashankar of the CeNSE said.

    The nano material Gallium Nitride, or GaN, is a superior alternative to silica-based semiconductors and is expected to generate revenues in the range of $700 million by 2020, from the current range of $300 million, according to experts in the field.

    “The proposal to set up a foundry at the IISc for producing GaN is a good development. Gallium nitride technology will substantially help in the development of next-generation radars, seekers and communication systems, and will be useful in systems like Light Combat Aircraft,” said R K Sharma, the director of the DRDO’s (Defence Research and Development Organisation) Solid State Physics Lab.

    The CeNSE facility at the IISc, which was inaugurated in 2015 by Prime Minister Narendra Modi, is attempting to create an ecosystem of GaN electronics, including materials, devices and systems. GaN-based transistors from the CeNSE are already being sold to researchers in the country. The creation of a commercial GaN foundry would service industry demand for the emerging technology.

    “What we need for strategic purposes is efficient energy consumption systems, and gallium nitride conductors are the answer. Unmanned vehicles, for example, which are the future of security systems, are dependent on energy efficiency,” Director Sharma said, adding that with countries like China investing in a very strategic manner in semi-conductor systems, India also needs to do so.

    Among the areas where GaN semi-conductors can be used are phased array radars for electronic warfare, like AESA radars that are fitted on ultra-modern fighter jets.

    The foundation for the development of GaN technologies was laid by the 2014 Nobel Physics Prize-winning work on blue Lighting Emitting Diodes using GaN, by Japanese-origin scientists Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. The techonologies have also been used in blue ray information storage systems and are being utilised increasingly now in high-power and high-speed electronics.

    GaN is described as a wide-gap semiconductor with unique electronic properties. It is tough and can operate at high temperatures at high switching speeds with power flows much superior to silica.

    “In every device, be it a laptop, an AC, or an automobile, there are electronic circuits that have to handle very high power and voltages. It is these circuits that constitute the field of power electronics,” Prof Srinivasan Raghavan says in a section on GaN at the CeNSE website.

    “The worldwide power electronics device market is $36 billion. As power consumption goes up, the requirement for power electronics will go up. So when you start working on GaN-based materials, you are looking at potential impact on a much larger power electronics market. What we have set up here in the IISc is a GaN platform where many of these things can mushroom,” he states.

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  2. randomradio

    randomradio Mod Staff Member MODERATOR

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    So the plan to setup a full production facility by 2018 is proceeding as planned. :D
     
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  3. lca-fan

    lca-fan Major SENIOR MEMBER

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    We need to invest heavily in semi conductors. We have already missed the bus and are paying heavy price for it by importing huge amounts of electronic products which cost us forex and tilt our trade in negative territory. All this should be corrected by investing in future semi conductors like GaN and establishing plants on large scale for self use and exports. Good to see that start has been made.
     
  4. HariPrasad

    HariPrasad Lieutenant FULL MEMBER

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    Awesome. Allocate the fund today itself. This is a critical area where we leg behind. This sector should be boost on war footing bases.
     
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  5. PARIKRAMA

    PARIKRAMA Angel or Devil? Staff Member ADMINISTRATOR

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    In the whole country, if there is one place where I would have love to see this facility then it will always be IISc ...
     
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  6. Sathya

    Sathya Lieutenant FULL MEMBER

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    For small scale research purposes or large scale industry?
     
  7. Sathya

    Sathya Lieutenant FULL MEMBER

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    Also what happened to Indian OS for computers?
     
  8. halloweene

    halloweene Major MILITARY STRATEGIST

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    I'm doubtful about the "on silicon" part. on SiGe or Si-diamond ok, but silicon is problematic due to heating issues with GaN semi conductors. Of course the article may not be so detailed...
     
  9. randomradio

    randomradio Mod Staff Member MODERATOR

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    Very large scale.
     
  10. GuardianRED

    GuardianRED Lieutenant FULL MEMBER

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    This is excellent development !!!... ONLY wish that the Article didn't Start with the 'WONDER' Nano Material!!! .... Don't hype!!!
     
  11. randomradio

    randomradio Mod Staff Member MODERATOR

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    GaN on SiC fulfills most roles at a cheaper rate.

    GaN on Diamond will only come in a few years later for X band and similar. It is only at research level today.
     
  12. zebra7

    zebra7 Captain FULL MEMBER

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    If we could produce GaAs and GaNs MMIC, that would be great but I think that funds should be for the nano technology, and their are many other fields where it could be useful, whether its for the new material, or composites for the airframe which are more stronger, lighter etc or for the hot core section of the Turbofan engine development.
     
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  13. vstol jockey

    vstol jockey Colonel MILITARY STRATEGIST

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    if there is any research facility or institution which gives maximum bang for the buck, its IISc. This is indeed money very well spent.
     
  14. SrNair

    SrNair Captain FULL MEMBER

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    Much needed investment
     
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  15. tamborinePerson

    tamborinePerson IDF NewBie

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    Just to temper the enthusiasm a little bit... This report is not entirely accurate. No decision has been taken.

    Also, GaN on Si is a viable technology. Compared to GaN on SiC or GaN on sapphire, it has certain cost advantages (Si wafers are much cheaper than SiC or sapphire wafer) and certain performance downsides.

    Source: I am a witness.
     
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